电子芯片模板

SKiiP Technology

First developed in 1992, SKiiP Technology utilizes a baseplate-less direct bonded copper (DBC) substrate that is pressed onto a heatsink in multiple places using a specially designed pressure element. This same element can also apply high pressure to busbar or spring terminals to make electrical contact between the DBC substrate and outside circuits. The use of a pressure frame allows for mountingx pressure to be evenly distributed across the DBC substrate — close to chips — providing excellent thermal contact to the underlying heatsink.

The SKiiP Technology combines IGBT modules, gate drive for safe signal insulation, ultra-precise current and voltage sensors, and an efficient heatsink, in one, perfectly matched setup.

The SKiiP IPM 1200V and 1700V product lines set a benchmark for high-performance and robust inverter designs. SKiiP 3 has propagated widely through the industrial drive segment and SKiiP 7 is a new generation based on the actual IGBT/Diode chip generation and driver components. With its six-pack and half-bridge topologies, it covers a current range from 500A up to 2400A. The SKiiP 4, available in a half-bridge topology, has been optimized for the highest power cycling requirements and covers the higher power range up to 3600A.

Application:

-Renewable energy - Traction - Elevators - Industrial drives

Housing:

-SKiiP3 six-pack

-SKiiP3 half-bridge type with 2, 3 or 4 modules on the heat sink

-SKiiP 4 half-bridge topology with 3,4 or 6 modules on the heat sink

Below is the homepage of Semikron showing data sheet of each IGBT module.

https://www.semikron-danfoss.com/products/ipm-and-drivers/skiip-ipm/skiip-ipm-by-product-line

SKiiP^® IPM   IGBT Topology   

SKiiP® IPM list